bzx384-v-series document number 85764 rev. 1.6, 17-may-06 vishay semiconductors www.vishay.com 1 20145 small signal zener diodes features ? silicon planar power zener diodes ? the zener voltages are graded according to the international e 24 standard ? standard zener voltage tolerance is 5 %; replace "c" with "b" for 2 % tolerance ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: sod323 plastic case weight: approx. 5.0 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/3 k per 7" reel (8 mm tape), 15 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified 1) device on fiberglass substrate thermal characteristics t amb = 25 c, unless otherwise specified 1) valid that electrodes are ke pt at ambient temperature parameter test condition symbol value unit power dissipation p tot 200 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 650 1) k/w junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c e3
www.vishay.com 2 document number 85764 rev. 1.6, 17-may-06 bzx384-v-series vishay semiconductors electrical characteristics (1) measured with pulses t p = 5 ms partnumber marking code zener voltage range dynamic resistance te s t current temperature coefficient of zener voltage te s t current reverse leakage current v z at i zt1 r zj at i zt1 r zj at i zt2 i zt1 vz at i zt1 at i zt2 i r at v r v ma 10 -4 /c ma a v min max typ typ min max bzx384c2v4-v w1 2.2 2.6 70 ( 100) 275 5 - 9 - 4 1 50 1 bzx384c2v7-v w2 2.5 2.9 75 ( 100) 300 ( 600) 5 - 9 - 4 1 20 1 bzx384c3v0-v w3 2.8 3.2 80 ( 95) 325 ( 600) 5 - 9 - 3 1 10 1 bzx384c3v3-v w4 3.1 3.5 85 ( 95) 350 ( 600) 5 - 8 - 3 1 5 1 bzx384c3v6-v w5 3.4 3.8 85 ( 90) 375 ( 600) 5 - 8 - 3 1 5 1 bzx384c3v9-v w6 3.7 4.1 85 ( 90) 400 ( 600) 5 - 7 - 3 1 3 1 bzx384c4v3-v w7 4 4.6 80 ( 90) 410 ( 600) 5 - 6 - 1 1 3 1 bzx384c4v7-v w8 4.4 5 50 ( 80) 425 ( 500) 5 - 5 2 1 3 2 bzx384c5v1-v w9 4.8 5.4 40 ( 60) 400 ( 480) 5 - 3 4 1 2 2 bzx384c5v6-v wa 5.2 6 15 ( 40) 80 ( 400) 5 - 2 6 1 1 2 bzx384c6v2-v wb 5.8 6.6 6.0 ( 10) 40 ( 150) 5 - 1 7 1 3 4 bzx384c6v8-v wc 6.4 7.2 6.0 ( 15) 30 ( 80) 5 2 7 1 2 4 bzx384c7v5-v wd 7 7.9 6.0 ( 15) 30 ( 80) 5 3 7 1 1 5 bzx384c8v2-v we 7.7 8.7 6.0 ( 15) 40 ( 80) 5 4 7 1 0.7 5 bzx384c9v1-v wf 8.5 9.6 6.0 ( 15) 40 ( 100) 5 5 8 1 0.5 6 bzx384c10-v wg 9.4 10.6 8.0 ( 20) 50 ( 150) 5 5 8 1 0.2 7 bzx384c11-v wh 10.4 11.6 10 ( 20) 50 ( 150) 5 5 9 1 0.1 8 bzx384c12-v wi 11.4 12.7 10 ( 25) 50 ( 150) 5 6 9 1 0.1 8 bzx384c13-v wk 12.4 14.1 10 ( 30) 50 ( 170) 5 7 9 1 0.1 8 bzx384c15-v wl 13.8 15.6 10 ( 30) 50 ( 200) 5 7 9 1 0.05 0.7 v znom. bzx384c16-v wm 15.3 17.1 10 ( 40) 50 ( 200) 5 8 9.5 1 0.05 0.7 v znom. bzx384c18-v wn 16.8 19.1 10 ( 45) 50 ( 225) 5 8 9.5 1 0.05 0.7 v znom. bzx384c20-v wo 18.8 21.2 15 ( 55) 60 ( 225) 5 8 10 1 0.05 0.7 v znom. bzx384c22-v wp 20.8 23.3 20 ( 55) 60 ( 250) 5 8 10 1 0.05 0.7 v znom. bzx384c24-v wr 22.8 25.6 25 ( 70) 60 ( 250) 5 8 10 1 0.05 0.7 v znom. bzx384c27-v ws 25.1 28.9 25 ( 80) 65 ( 300) 2 8 10 0.5 0.05 0.7 v znom. bzx384c30-v wt 28 32 30 ( 80) 70 ( 300) 2 8 10 0.5 0.05 0.7 v znom. bzx384c33-v wu 31 35 35 ( 80) 75 ( 325) 2 8 10 0.5 0.05 0.7 v znom. bzx384c36-v ww 34 38 35 ( 90) 80 ( 350) 2 8 10 0.5 0.05 0.7 v znom. bzx384c39-v wx 37 41 40 ( 130) 80 ( 350) 2 10 12 0.5 0.05 0.7 v znom. bzx384c43-v wy 40 46 45 ( 150) 85 ( 375) 2 10 12 0.5 0.05 0.7 v znom. bzx384c47-v wz 44 50 50 ( 170) 85 ( 375) 2 10 12 0.5 0.05 0.7 v znom. bzx384c51-v x1 48 54 60 ( 180) 85 ( 400) 2 10 12 0.5 0.05 0.7 v znom. bzx384c56-v x2 52 60 70 ( 200) 100 ( 425) 2 9 11 0.5 0.05 0.7 v znom. bzx384c62-v x3 58 66 80 ( 215) 100 ( 450) 2 9 12 0.5 0.05 0.7 v znom. bzx384c68-v x4 64 72 90 ( 240) 150 ( 475) 2 10 12 0.5 0.05 0.7 v znom. bzx384c75-v x5 70 79 95 ( 255) 170 ( 500) 2 10 12 0.5 0.05 0.7 v znom.
bzx384-v-series document number 85764 rev. 1.6, 17-may-06 vishay semiconductors www.vishay.com 3 electrical characteristics partnumber marking code zener voltage range dynamic resistance te s t current temperature coefficient of zener voltage te s t current reverse leakage current v z at i zt1 r zj at i zt1 r zj at i zt2 i zt1 vz at i zt1 ati zt2 i r at v r v ma 10 -4 /c ma a v min max typ typ min max bzx384b2v4-v w1 2.35 2.45 70 ( 100) 275 5 - 9 - 4 1 50 1 bzx384b2v7-v w2 2.65 2.75 75 ( 100) 300 ( 600) 5 - 9 - 4 1 20 1 bzx384b3v0-v w3 2.94 3.06 80 ( 95) 325 ( 600) 5 - 9 - 3 1 10 1 bzx384b3v3-v w4 3.23 3.37 85 ( 95) 350 ( 600) 5 - 8 - 3 1 5 1 bzx384b3v6-v w5 3.53 3.67 85 ( 90) 375 ( 600) 5 - 8 - 3 1 5 1 bzx384b3v9-v w6 3.82 3.98 85 ( 90) 400 ( 600) 5 - 7 - 3 1 3 1 bzx384b4v3-v w7 4.21 4.39 80 ( 90) 410 ( 600) 5 - 6 - 1 1 3 1 bzx384b4v7-v w8 4.61 4.79 50 ( 80) 425 ( 500) 5 - 5 2 1 3 2 bzx384b5v1-v w9 5.00 5.20 40 ( 60) 400 ( 480) 5 - 3 4 1 2 2 bzx384b5v6-v wa 5.49 5.71 15 ( 40) 80 ( 400) 5 - 2 6 1 1 2 bzx384b6v2-v wb 6.08 6.32 6.0 ( 10) 40 ( 150) 5 - 1 7 1 3 4 bzx384b6v8-v wc 6.66 6.94 6.0 ( 15) 30 ( 80) 5 2 7 1 2 4 bzx384b7v5-v wd 7.35 7.65 6.0 ( 15) 30 ( 80) 5 3 7 1 1 5 bzx384b8v2-v we 8.04 8.36 6.0 ( 15) 40 ( 80) 5 4 7 1 0.7 5 bzx384b9v1-v wf 8.92 9.28 6.0 ( 15) 40 ( 100) 5 5 8 1 0.5 6 bzx384b10-v wg 9.80 10.2 8.0 ( 20) 50 ( 150) 5 5 8 1 0.2 7 bzx384b11-v wh 10.8 11.2 10 ( 20) 50 ( 150) 5 5 9 1 0.1 8 bzx384b12-v wi 11.8 12.2 10 ( 25) 50 ( 150) 5 6 9 1 0.1 8 bzx384b13-v wk 12.7 13.3 10 ( 30) 50 ( 170) 5 7 9 1 0.1 8 bzx384b15-v wl 14.7 15.3 10 ( 30) 50 ( 200) 5 7 9 1 0.05 0.7 v znom. bzx384b16-v wm 15.7 16.3 10 ( 40) 50 ( 200) 5 8 9.5 1 0.05 0.7 v znom. bzx384b18-v wn 17.6 18.4 10 ( 45) 50 ( 225) 5 8 9.5 1 0.05 0.7 v znom. bzx384b20-v wo 19.6 20.4 15 ( 55) 60 ( 225) 5 8 10 1 0.05 0.7 v znom. bzx384b22-v wp 21.6 22.4 20 ( 55) 60 ( 250) 5 8 10 1 0.05 0.7 v znom. bzx384b24-v wr 23.5 24.5 25 ( 70) 60 ( 250) 5 8 10 1 0.05 0.7 v znom. BZX384B27-V ws 26.5 27.5 25 ( 80) 65 ( 300) 2 8 10 0.5 0.05 0.7 v znom. bzx384b30-v wt 29.4 30.6 30 ( 80) 70 ( 300) 2 8 10 0.5 0.05 0.7 v znom. bzx384b33-v wu 32.3 33.7 35 ( 80) 75 ( 325) 2 8 10 0.5 0.05 0.7 v znom. bzx384b36-v ww 35.3 36.7 35 ( 90) 80 ( 350) 2 8 10 0.5 0.05 0.7 v znom. bzx384b39-v wx 38.2 39.8 40 ( 130) 80 ( 350) 2 10 12 0.5 0.05 0.7 v znom. bzx384b43-v wy 42.1 43.9 45 ( 150) 85 ( 375) 2 10 12 0.5 0.05 0.7 v znom. bzx384b47-v wz 46.1 47.9 50 ( 170) 85 ( 375) 2 10 12 0.5 0.05 0.7 v znom. bzx384b51-v x1 50.0 52.0 60 ( 180) 85 ( 400) 2 10 12 0.5 0.05 0.7 v znom. bzx384b56-v x2 54.9 57.1 70 ( 200) 100 ( 425) 2 9 11 0.5 0.05 0.7 v znom. bzx384b62-v x3 60.8 63.2 80 ( 215) 100 ( 450) 2 9 12 0.5 0.05 0.7 v znom. bzx384b68-v x4 66.6 69.4 90 ( 240) 150 ( 475) 2 10 12 0.5 0.05 0.7 v znom. bzx384b75-v x5 73.5 76.5 95 ( 255) 170 ( 500) 2 10 12 0.5 0.05 0.7 v znom.
www.vishay.com 4 document number 85764 rev. 1.6, 17-may-06 bzx384-v-series vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward characteristics figure 2. admissible power dissi pation vs. ambient temperature figure 3. pulse thermal resistance vs. pulse duration 1 8 114 ma 10 3 10 2 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 i f v f 0 0.2 0.4 0.6 0. 8 1 v t j = 100 c t j = 25 c 1 8 192 250 200 150 100 50 0 m w p tot 0 100 200 c t am b 1 8 116 0.01 0.02 0.05 0.1 0.2 0.5 = 0 p i tp tp t t 10 3 c/ w 7 5 4 3 2 7 5 4 3 2 7 5 4 3 2 10 2 10 -5 10 -4 10 -3 10 -2 10 -1 110s 10 1 r tha tp figure 4. dynamic resist ance vs. zener current figure 5. capacitance vs. zener voltage figure 6. dynamic resist ance vs. zener current 1 8 117 1000 5 4 3 2 5 4 3 2 100 1 r zj 0.1 25 25 110 i z t j = 25 c 2.7 5 4 3 2 100 25 100 ma 3.6 4.7 5.1 5.6 1 8 193 1000 7 5 4 3 2 7 5 4 3 2 100 10 pf c tot 1 2345 2345 10 100 v v z t j = 25 c v r = 2 v v r = 1 v v r = 2 v v r = 1 v 1 8 119 100 5 4 3 2 5 4 3 2 10 r zj 0.1 25 25 110 i z 1 25 100 ma t j = 25 c 33 27 22 1 8 15 12 10 6. 8 / 8 .2 6.2
bzx384-v-series document number 85764 rev. 1.6, 17-may-06 vishay semiconductors www.vishay.com 5 figure 7. dynamic resistance vs. zener current figure 8. thermal differential resistance vs. zener voltage figure 9. dynamic resist ance vs. zener voltage 1 8 120 10 3 7 5 4 3 2 7 5 4 3 2 10 0.1 2345 2345 1 10 ma r zj i z t j = 25 c 47 + 51 43 39 36 10 2 1 8 121 10 3 5 4 3 2 5 4 3 2 10 2 1 r zth 5 4 3 2 10 1 2345 2345 10 100 v v z at i z = 5 ma negati v e positi v e v z t j r zth = r tha x v z x 1 8 122 100 7 5 4 3 2 7 5 4 3 2 1 r zj 10 t j = 25 c i z = 5 ma 1 2345 2345 10 100 v v z figure 10. temperature dependence of zener voltage vs. zener voltage figure 11. change of zener volt age vs. junction temperature figure 12. change of zener volt age vs. junction temperature 1 8 135 25 20 15 10 5 0 - 5 m v /c v z t j 1 2345 2345 10 100 v v z at i z = 5 ma v 27 v , i = 2 ma 5 ma 1 ma 20 ma i z = 1 8 124 v z at i z = 5 ma 25 15 10 8 7 6.2 5.9 5.6 5.1 4.7 3.6 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 1 - 0.2 v z v t j 0204060 8 0 100 120 140 c 1 8 194 9 7 5 3 1 - 1 v v z 8 6 4 2 0 0 100 60 t j 20 40 120 8 0 140 c i z = 2 ma 51 43 36 v z at i z = 2 ma
www.vishay.com 6 document number 85764 rev. 1.6, 17-may-06 bzx384-v-series vishay semiconductors figure 13. temperature dependence of zener voltage vs. zener voltage figure 14. change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage figure 15. change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage 1 8 195 100 8 0 60 40 20 0 m v /c v z t j 0 20 40 8 0 60 100 v v z at i z = 2 ma i z = 5 ma 1 8 196 1.6 1.2 0. 8 0.4 0 - 0.4 v v z 1.4 1 0.6 0.2 - 0.2 1 2345 2345 10 100 v v z at i z = 5 ma i z = 5 ma v z 27 v ; i z = 2 ma v z = r zth x i z 1 8 160 5 4 3 2 1 0 v v z 0 20 40 60 8 0 100 v v z at i z = 5 ma i z = 5 ma i z = 2.5 ma v z = r zth x i z figure 16. breakdown characteristics figure 17. breakdown characteristics figure 18. breakdown characteristics 1 8 111 t j = 25 c 5 ma test c u rrent i z 1 234567 8 9 0 10 v v z 3.3 3.9 4.7 5.6 6. 8 8 .2 2.7 ma 50 40 30 20 10 0 l z 1 8 112 10 20 30 0 40 v v z ma 30 20 10 0 l z 5 ma test c u rrent i z t j = 25 c 12 15 1 8 22 27 33 10 36 1 8 191 ma 10 8 6 4 2 0 l z 10 20 30 40 50 60 70 8 090 0 100 v v z 2 ma test c u rrent i z t j = 25 c 43 51 47 39
bzx384-v-series document number 85764 rev. 1.6, 17-may-06 vishay semiconductors www.vishay.com 7 package dimensions in mm (inches): sod323 0.25 (0.010) min 1.15 (0.045) 0. 8 (0.031) 0.15 (0.006) 0.10 (0.004) 0.40 (0.016) 0.20 (0.00 8 ) 1.95 (0.077) 1.60 (0.063) 2. 8 5 (0.112) 2.50 (0.09 8 ) 1.5 (0.059) 1.1 (0.043) cathode b ar 0.1 (0.004) max 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) 0.6 (0.024) foot print recommendation: doc u ment no.: s 8 - v -3910.02-001 (4) re v . 03 - date: 0 8 . n o v em b er 2004 17443
www.vishay.com 8 document number 85764 rev. 1.6, 17-may-06 bzx384-v-series vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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